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OBSOLETE
Polar TM HiPerFET TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN30N110P
V DSS = 1100V
I D25 = 25A
R DS(on) ≤ 360 m Ω
t rr ≤ 300 ns
miniBLOC, SOT-227
E153432
Symbol
V DSS
V DGR
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Maximum Ratings
1100
1100
V
V
G
S
V GSS
V GSM
Continuous
Transient
± 30
± 40
V
V
D
S
I D25
I DM
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
25
75
A
A
G = Gate
S = Source
D = Drain
I AR
E AS
dV/dt
P D
T J
T JM
T stg
T L
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
1.6mm (0.062 in.) from case for 10s
15
1.5
20
695
-55 ... +150
150
-55 ... +150
300
A
J
V/ns
W
° C
° C
° C
° C
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
? International standard package
? Encapsulating epoxy meets
UL 94 V-0, flammability classification
? miniBLOC with Aluminium nitride
isolation
? Fast recovery diode
? Unclamped Inductive Switching (UIS)
V ISOL
M d
Weight
50/60 Hz, RMS
I ISOL ≤ 1mA
Mounting torque
Terminal connection torque
t = 1min
t = 1s
2500
3000
1.5/13
1.3/11.5
30
V~
V~
Nm/lb.in.
Nm/lb.in.
g
rated
? Low package inductance
- easy to drive and to protect
Advantages
? Easy to mount
? Space savings
? High power density
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Applications:
BV DSS
V GS = 0V, I D = 3mA
1100
V
High Voltage Switched-mode and
resonant-mode power supplies
V GS(th)
I GSS
V DS = V GS , I D = 1mA
V GS = ± 30V, V DS = 0V
3.5
6.5
± 200
V
nA
High Voltage Pulse Power Applications
High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
I DSS
R DS(on)
V DS = V DSS
V GS = 0V
V GS = 10V, I D = 15A, Note 1
T J = 125 ° C
50 μ A
2.5 mA
360 m Ω
Generators
High Voltage DC-DC converters
High Voltage DC-AC inverters
? 2011 IXYS CORPORATION, All rights reserved
DS99899OBS (05/11)
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